5 edition of Laser Crystallization of Silicon - Fundamentals to Devices, Volume 75 (Semiconductors and Semimetals) found in the catalog.
December 23, 2003
by Academic Press
Written in English
|The Physical Object|
|Number of Pages||204|
Pulsed laser crystallization of very thin silicon films T. Sameshimaa,T, H. Watakabea, N. Andoha, S. Higashib aTokyo University of Agriculture and Technology, Koganei, Tokyo , Japan bHiroshima University, Higashi-Hiroshima , Japan Available online 29 March Abstract We report nm-pulsed-XeCl-excimer laser annealing of nm-thick silicon films formed on quartz substrates. Amorphous silicon films with and without spin-coating aluminum-salt-solution are treated by nm ArF excimer laser with different laser energies. It is observed that the crystalline fraction increases along with the laser energy. By comparation, with the help of Al, higher crystalline volume fraction and lower in-plane stress can be achieved at the same laser energy (mJ).Author: Wen Yun Dai, Jing Jin, Chao Xian Hui, Can Liu, Zhi Jun Yuan, Wei Min Shi.
C.P Grigoropoulos, S. Moon and M. Lee, “Heat Transfer and Phase Transformations in Laser Melting and Recrystallization of Amorphous Thin Si Films,” in Laser Crystallization of Silicon – Fundamentals to Devices, in Semiconductors and Semimetals Vol. 75, Author: Gary J. Cheng, Daniel Pirzada, Xin Ai, Ben Li. Subsequently, the crystallization to poly-Si was carried out with KrF excimer laser (Gigaphoton). The laser beam has the wavelength of nm, the pulse duration around 55 ns, and the repetition rate of Hz. The laser energy density and the number of laser beam shots were changed to – mJ/cm 2 andCited by: 9.
Epitaxy refers to a type of crystal growth or material deposition in which new crystalline layers are formed with a well-defined orientation with respect to the crystalline new layers formed are called the epitaxial film or epitaxial layer. The relative orientation of the epitaxial layer to the crystalline substrate is defined in terms of the orientation of the crystal lattice of. This handbook facilitates the selection, design and operation of large-scale industrial crystallizers that process crystals with the proper size distribution, shape and purity sought - including cooling, evaporation, drowning-out reaction, melt, and related crystallization techniques. This new edition offers new results on direct-contact cooling crystallization.5/5(1).
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Laser Crystallization of Silicon - Fundamentals to Devices (Volume 75) (Semiconductors and Semimetals (Volume 75)) [Nickel, Norbert H.] on *FREE* shipping on qualifying offers. Laser Crystallization of Silicon - Fundamentals to Devices (Volume 75) (Semiconductors and Semimetals (Volume 75))Format: Hardcover.
Laser Crystallization of Silicon-Fundamentals to Devices. Prof. Nickel. Vol Pages () Show all chapter previews Show all chapter previews.
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Purchase Laser Crystallization of Silicon - Fundamentals to Devices, Volume 75 - 1st Edition. Print Book & E-Book. ISBNThis book on the "Laser Crystallization of Silicon" reviews the latest experimental and theoretical studies in the field. It has been written by recognised global authorities and covers the most recent phenomena related to the laser crystallization process and the properties of the resulting polycrystalline : This book on the Laser Crystallization of Silicon reviews the latest experimental and theoretical studies in the field.
It has been written by recognised global authorities and covers the most recent phenomena related to the laser crystallization process and the properties of the resulting polycrystalline : Paperback. Laser Crystallization of Silicon - Fundamentals to Devices: Volume 75 by Norbert H.
Nickel,available at Book Depository with free delivery worldwide. This book on the Laser Crystallization of Silicon reviews the latest experimental and theoretical studies in the field. It has been written by recognised global authorities and covers the most recent phenomena related to the laser crystallization process and the properties of the resulting polycrystalline silicon.
Series: Semiconductors and Semimetals Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the "Willardson and Beer" Series, it has succeeded in.
Also, laser-processing enhancements, such as laser doping and fabrication of self-aligned transistors, provide additional tools to fabricate unique devices. These materials and device processing issues are described, and the device results are by: The electrical conductivity of silicon increased from ×10 −6 (no voltage application) to ×10 −2 S/cm as pulsed voltage increased to V, which was very large conductivity compared to that of the as-crystallized polycrystalline silicon by simple laser irradiation.
This result means that long melting duration caused large grain : S Ishigame, K Ozaki, T Sameshima, S Higashi. Semiconductors and Semimetals, Volume Laser Crystallization of Silicon: Fundamentals to Devices by Robert K. Willardson (Series Editor), Norbert H. Nickel (Editor).
Grigoropoulos, C.P., Seung-jae Moon and Ming-Hong Lee,“Heat Transfer and Phase Transformations in Laser Melting and Recrystallization of Amorphous Thin Si Films,” in Laser Crystallization of Silicon – Fundamentals to Devices, in Semiconductors and Semimetals Vol.
75, edited by N. Nickel, published by Academic Press. Whether you've loved the book or not, if you give your honest and detailed thoughts then people will find new books that are right for them.
1 Medical Computer Vision: Algorithms for Big Data: International Workshop, MCVHeld in Conjunction with MICCAIMunich, Germany, October 9,Revised Selected Papers.
Simultaneous high crystallinity and sub-bandgap optical absorptance in hyperdoped black silicon using nanosecond laser annealing Laser Crystallization of Silicon-Fundamentals to Devices (Academic Press, ), Vol. Google Scholar Crossref; I. De Wolf, Semicond. by: Low temperature processing is a prerequisite for compatible technologies involving combined a-Si and poly-silicon devices or for fabricating these devices on glass substrates.
This paper describes excimer-laser-induced crystallization of thin amorphous silicon films deposited by plasma CVD (a-Si:H) and LPCVD (a-Si). The intense, pulsed UV produced by the laser is highly absorbed by the Cited by: Here V 0 is the volume before crystallization, and V is the volume after crystallization.
The density of c-Si at room temperature is to kg m –3. If the density of c-Si is set to be kg m –3, the specific volume of c-Si is calculated to be ×10 –4 m 3 kgCited by: 4.
The cores of these fibers show stress alterations, with indications of quasi-periodic stress relief in the glass. laser-induced directional recrystallization to produce single crystal silicon-core. Laser silicon crystallization using these wavelengths and pulse times allows a large variety of grains structure depending on the laser power and the scanning speed, leading to a very wide.
Semiconductor core optical fibers with a silica cladding are of great interest in nonlinear photonics and optoelectronics applications. Laser crystallization has been recently demonstrated for crystallizing amorphous silicon fibers into crystalline form.
Here we explore the underlying mechanism by which long single-crystal silicon fibers, which are novel platforms for silicon photonics, can be Cited by: Pulsed laser was demonstrated to be effective for the crystallization of amorphous hydrogenated silicon (a-Si:H) films deposited on Si wafer.
The amorphous films were deposited on () Si wafers by plasma enhanced chemical vapor deposition (PECVD). The crystallization treatment was carried out by a low frequency Nd:YAG laser. The crystallinity modifications induced by the laser treatment were Author: Hua Zhang, Guo Ran Hua, Hong Cheng.
single-crystal silicon on amorphous substrate at low tempera-ture. Excimer laser annealing has been a candidate to obtain this goal.1 In this letter, we will report a different approach that can also achieve single-crystal silicon on amorphous substrate at low temperature. It is accomplished by nanopat-terning of amorphous silicon ~a-Si!
Amorphous silicon (a-Si) was crystallized by femtosecond laser annealing (FLA) using a near-infrared (λ≈nm) ultrafast Ti:sapphire laser system. The intense ultrashort laser pulses lead to efficient nonlinear photoenergy absorption and the generation of very dense photoexcited plasma in irradiated materials, enabling nonlinear melting on transparent silicon by: Laser crystallization for large-area electronics Fig.
2 Tensile ﬁlm stress as a function of deposition temperatures for as-deposited and laser-annealed samples. nm-thick silicon ﬁlms formed on quartz substrates at and °C were microcrystalline.